Introduction
Onsemi, a leading US semiconductor manufacturer, has introduced its latest silicon carbide (SiC) technology platforms, marking a significant advancement in the realm of power semiconductors.
The new EliteSiC M3e MOSFETs are designed to enhance the efficiency and performance of electric vehicles (EVs) and other industrial applications, boasting impressive reductions in conduction and switch-off losses.
Improved Efficiency: Compared to previous generations, the EliteSiC M3e MOSFETs can reduce conduction losses by 30% and switching losses by up to 50%.
This improvement in efficiency allows for increased power density and can lead to the development of electric vehicles with longer range.
Focus on Electrification: Onsemi sees these SiC semiconductors as a key to enabling electrification and adoption of renewable energy sources.
Multiple Generations Planned: The company plans to release multiple generations of SiC semiconductors by 2030, showcasing their commitment to ongoing innovation in this area.
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Key Technological Advancements
Reduced Losses for Enhanced Efficiency
The new SiC platform from Onsemi reduces conduction losses by 30% and switch-off losses by up to 50% compared to previous generations.
This substantial improvement is crucial for applications such as electric vehicle traction inverters, which convert direct current (DC) from the battery to alternating current (AC) for the electric motor(s).
Reduced conversion losses mean less energy wasted as heat, leading to lower cooling requirements and increased vehicle range with the same battery size.
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Superior On-Resistance and Short-Circuit Capability
Onsemi’s EliteSiC M3e MOSFETs feature the industry’s lowest specific on-resistance with short-circuit capability. This is crucial for traction inverters.
Packaged in Onsemi’s power modules, the 1200V M3e die delivers much more phase current than earlier EliteSiC technologies.
This results in a 20% higher output power within the same traction inverter housing. Moreover, the advanced design allows for a fixed power stage to be constructed with approximately 20% less SiC content.
This reduction in material use translates to cost savings and the development of smaller, lighter, and more reliable systems.
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Broad Application Spectrum
The new SiC generation is not limited to electric drives but extends to various automotive and industrial applications, including:
- DC Fast Chargers: Enabling faster and more efficient charging of electric vehicles.
- Solar Inverters: Improving the conversion efficiency of solar power systems.
- Energy Storage Solutions: Enhancing the performance and reliability of energy storage systems.
- Data Centers: Increasing efficiency and reducing energy consumption in data center operations.
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How did Onsemi achieve this ?
Onsemi hasn’t divulged the exact methods behind their design improvements, but here are some potential ways they might be achieving the significant reduction in conduction and switching losses in their EliteSiC M3e MOSFETs compared to the previous M3T generation:
Conduction Loss Reduction:
- Lower On-Resistance (Rds(on)): This is the internal resistance of the MOSFET when it’s turned on. Lowering Rds(on) allows for less energy dissipation as heat during current flow. Onsemi claims the M3e has the industry’s lowest specific on-resistance [1]. They might have achieved this through improvements in the channel design or the material properties of the silicon carbide itself.
- Improved Gate Design: The gate controls the conductivity of the channel. A more efficient gate design could lead to a faster turn-on process, reducing the time the device spends in a high-resistance state during switching.
Switching Loss Reduction:
- Faster Switching Speed: Reducing the time it takes for the MOSFET to switch between on and off states can significantly decrease switching losses. This might be achieved through advancements in the gate driver circuitry or the internal device structure.
- Reduced Gate Charge: The gate requires a certain amount of charge to turn on and off. Lowering this gate charge reduces the energy lost during switching events.
Additional factors:
- Advanced Packaging: Utilizing innovative packaging techniques can minimize parasitic inductances and resistances within the device, further reducing switching losses.
- Superior Material Properties: Optimizing the doping profiles and material quality of the silicon carbide can lead to improved electrical characteristics and lower losses.
Onsemi might be employing a combination of these strategies to achieve the impressive loss reductions in their M3e MOSFETs. It’s important to note that this is speculation based on general SiC MOSFET design principles.
Strategic Impact and Future Plans
Driving Global Electrification
Simon Keeton, Group President of Power Solutions at Onsemi, emphasized the critical role of advanced power semiconductors in the future of electrification.
“Today’s infrastructure cannot keep up with the world’s demands for more intelligence and electrified mobility without significant innovations in power. This is critical to the ability to achieve global electrification and stop climate change,”
Onsemi is setting the pace for innovation and plans to significantly increase power density in its silicon carbide technology roadmap through 2030.
Investment in European Manufacturing
Onsemi is also expanding its manufacturing footprint by investing in a European SiC semiconductor plant in the Czech Republic.
This strategic move aims to support the growing demand for SiC semiconductors across various industries.
Onsemi’s extensive customer base includes numerous prominent EV manufacturers such as Volkswagen, BMW, Hyundai-Kia, and Zeekr, along with powertrain supplier Vitesco.
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Conclusion
Onsemi new generation of SiC semiconductors represents a pivotal advancement in power semiconductor technology.Onsemi’s new SiC semiconductors offer enhanced efficiency and lower material costs.
