Beyond EUV: ALD Advancement by Korean Company Aims to Decrease EUV Steps

Introduction

According to a report from South Korean media outlet The Elec, Chul Joo Hwang, Chairman of South Korean semiconductor equipment company Jusung Engineering, recently stated that future semiconductors will stack transistors together. As the expansion of DRAM and logic chips has reached its limit, stacking transistors like NAND is necessary to overcome these challenges. To achieve this, Hwang believes in developing more atomic layer deposition (ALD) technology compared to costly EUV.

By reducing the use of extreme ultraviolet (EUV) lithography steps in the production process of advanced chips, ALD technology can help address these challenges. Notably, stacking transistors can also reduce the need for further scaling of transistors. As stacking becomes increasingly important, the demand for ALD equipment is expected to rise.

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What is ALD Technology?

Atomic Layer Deposition (ALD) is a thin film deposition technique that deposits materials one atomic layer at a time.

This method ensures exceptional uniformity, precise thickness control, and excellent step coverage.

Using alternating chemical vapors, ALD guarantees that each layer of material is perfectly deposited, making it ideal for the intricate structures in modern semiconductors.

The adoption of ALD technology in semiconductor manufacturing offers several advantages:

1. Precision and Control: ALD provides atomic-level control over film thickness and composition, ensuring high uniformity and quality.
2. Versatility: The technology can be used with a wide range of materials, making it suitable for various semiconductor applications.
3. Scalability: ALD supports the production of complex 3D structures, essential for next-generation semiconductor devices.
4. Cost-Effectiveness: By reducing the reliance on expensive EUV lithography, ALD can help lower manufacturing costs.

How ALD will Reduce EUV Dependency

Atomic Layer Deposition (ALD) technology plays a crucial role in reducing the need for extreme ultraviolet (EUV) lithography steps during the production of advanced semiconductor chips. Let’s delve into the details:

Thin Film Growth with ALD:

• ALD is a precise thin film deposition technique that allows materials to grow layer by layer. It ensures high uniformity, excellent step coverage, and precise thickness control.
• By using ALD, semiconductor manufacturers can create uniform and conformal layers on complex three-dimensional structures, such as transistors and interconnects.

Challenges with Traditional Process Technologies:

• Traditional lithography techniques, including EUV, face limitations in scaling down feature sizes. As chips become more complex, achieving precise patterning becomes increasingly difficult.
• EUV lithography, while powerful, involves complex optics and expensive equipment. Reducing its usage can lead to cost savings and improved manufacturing efficiency.

Reducing EUV Steps with ALD:

• Stacking transistors (similar to NAND) is essential for overcoming limitations in DRAM and logic chip expansion.
• ALD enables the creation of high-quality gate dielectrics, metal gates, and other critical layers. By using ALD for these layers, manufacturers can reduce reliance on EUV steps.
• For example, ALD can be employed to deposit gate dielectric materials with precise thickness control, eliminating the need for multiple EUV exposures.

Impact on Transistor Scaling:

• Stacking transistors reduces the need for further scaling. As feature sizes shrink, maintaining performance and reliability becomes challenging.
• ALD allows manufacturers to create ultrathin layers with atomic precision, ensuring optimal transistor performance without aggressive scaling.

Rise in ALD Equipment Demand:

• As stacking becomes more important, the demand for ALD equipment is expected to rise.
• ALD is also crucial for producing III-V semiconductors and IGZO (Indium Gallium Zinc Oxide) semiconductors.
• Deep ultraviolet (DUV) equipment is anticipated to be used in 3D DRAM production, further emphasizing the role of ALD.

In summary, ALD technology provides a pathway to reduce reliance on EUV lithography steps, enhance chip performance, and optimize manufacturing processes. Its precision and versatility make it a valuable tool in semiconductor fabrication.

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ALD – EUV Explanation Using an Analogy

Imagine you’re baking a fancy cake with super thin, intricate icing patterns. Traditionally (like EUV lithography), you might use a stencil and frosting to create the design. This can be tricky – the frosting might not be even, you might rip the stencil, or it might be difficult to get very fine details.

ALD is like a new, improved decorating technique. Instead of a single frosting layer, you carefully add frosting one tiny sugar molecule at a time. This allows for incredibly precise control over the thickness and patterning of the frosting.

Here’s an example related to chips:

Traditional EUV method: You want to create a thin insulating layer (like frosting) on the gate (like the cake base) of a transistor (like a cupcake). EUV might involve multiple steps:

• Apply a resist (like a temporary sugary layer) on the wafer (like the cake base).
• Use EUV light to expose the desired pattern on the resist.
• Develop the resist, removing unwanted areas.
• Deposit the insulating material using another technique.
• Repeat the resist and exposure steps for any additional layers needed.

• ALD method: With ALD, you directly deposit the insulating material one atomic layer at a time. This eliminates the need for multiple EUV exposures and resist steps. It’s like carefully adding sugar molecules to create the exact frosting pattern you want, layer by layer.

The advantage of ALD is its precise control. You can achieve the desired thickness and patterning of the insulating layer (frosting) much more accurately and efficiently compared to the traditional EUV method (multiple frosting and stencil steps). This translates to better performing and potentially cheaper chips.

Applications in 3D DRAM and Beyond

One of the significant applications of Jusung Engineering’s ALD technology is in the production of 3D DRAM.

This advanced memory technology benefits from the precise control and uniformity provided by ALD. It enables the creation of more efficient and higher-capacity memory chips. Additionally, the technology is expected to play a crucial role in the production of III-V semiconductors and IGZO semiconductors. This further expands its impact on the industry.

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Conclusion

Jusung Engineering’s advancements in Atomic Layer Deposition (ALD) technology represent a significant milestone in the semiconductor industry.

By reducing the need for EUV lithography, ALD offers a more cost-effective and efficient method for producing advanced chips.

The technology’s precision and versatility make it an essential tool for the future of semiconductor manufacturing, promising continued innovation and progress in the industry.