How China’s Game-Changing EUV Breakthrough is a Challenge to ASML Dominance

Harbin Institute's groundbreaking EUV technology challenges US chip restrictions, offering a cost-effective and energy-efficient solution for advanced semiconductor manufacturing.

Introduction

China has taken a major stride in semiconductor manufacturing by developing innovative extreme ultraviolet (EUV) lithography technology. Amid intensifying US sanctions aimed at limiting China’s access to cutting-edge chip-making tools, researchers at the Harbin Institute of Technology have introduced a new EUV approach that promises to revolutionize the field.

EUV & China

China’s scientists are pioneering new approaches in the development of extreme ultraviolet (EUV) lithography, aiming to enable the mass production of advanced semiconductor chips as they work to overcome stringent sanctions imposed by the United States.

One notable project from the Harbin Institute of Technology recently won first prize at the Harbin Provincial Innovation Achievement Transformation Competition for university and research institute employees on December 30.

The research team adopted an entirely different technological approach from Western methods to generate EUV laser light.

According to the institute’s website, the project titled “discharge plasma extreme ultraviolet lithography light source,” led by Professor Zhao Yongpeng from the School of Aerospace Engineering, is described as having “high energy conversion efficiency, low cost, compact size, and relatively low technical difficulty.”

“It can produce extreme ultraviolet light with a central wavelength of 13.5 nanometres, meeting the urgent demand for EUV light sources in the photolithography market,” the official report stated.

In the semiconductor industry, the photolithography machine is considered the most complex and challenging to manufacture.

Currently, only EUV lithography machines can produce chips smaller than seven nanometres, and Dutch company ASML is the sole manufacturer of these machines worldwide.

Their achievement not only showcases resilience but also marks a pivotal moment in China’s journey towards technological self-reliance.

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Brief Overview

Innovative Approach: Harbin researchers developed a discharge plasma EUV light source, offering energy efficiency and cost-effectiveness.

Strategic Significance: This breakthrough helps China sidestep restrictions on EUV technology from the US and Dutch companies.

Global Impact: The project aims to meet the rising demand for advanced semiconductor chips in global markets.

Collaborative Efforts: Several Chinese institutions are working on complementary technologies to strengthen their position.

Future Challenges: Scaling up production and refining technical parameters remain critical hurdles.

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The EUV Challenge: Breaking US Dominance

EUV lithography is essential for producing chips smaller than 7 nanometers. However, only the Dutch company ASML has mastered the technology to manufacture EUV lithography machines.

Under pressure from the US, ASML has been barred from selling its advanced equipment to China since 2019.

The Netherlands recently tightened these restrictions further, effectively halting China’s access to critical components.

ASML’s proprietary laser-produced plasma (LPP) technology uses high-energy lasers to convert liquid tin droplets into plasma, generating EUV light.

This complex process relies on precision-engineered components and advanced control systems, making it a closely guarded technology.

Harbin’s Breakthrough: Discharge Plasma EUV Light Source

Researchers at the Harbin Institute of Technology, led by Professor Zhao Yongpeng, have developed a simpler and cost-effective method known as laser-induced discharge plasma (LDP).

ASML’s EUV light source utilizes the laser-produced plasma (LPP) method, where high-energy lasers bombard liquid tin droplets to create plasma. This process relies on advanced laser components and sophisticated FPGA chip control, with the core technology historically dominated by foreign companies.

In contrast, Zhao’s team employs the laser-induced discharge plasma (LDP) method. Here, a laser vaporizes a small amount of tin into a cloud between two electrodes. A high voltage is then applied across the electrodes, energizing the tin cloud and converting it into plasma. The resulting collisions between electrons and high-valence tin ions produce EUV light.

Compared to LPP technology, the LDP method is simpler, more cost-effective, and achieves higher energy utilization by directly converting electrical energy into plasma.

Despite its advantages, optimizing the timing and parameters of discharge pulses presents a significant technical challenge. Additionally, there are concerns about potential power output limitations with the LDP method.

Zhao has been working on the development of discharge plasma EUV light sources since 2008, and the recent award suggests his team has made noteworthy progress. However, Zhao declined to comment on the matter.

Key Features of the Technology

  • Energy Efficiency: Converts electrical energy directly into plasma, reducing energy loss.
  • Simpler Design: Requires less complex equipment compared to LPP.
  • Cost-Effective: Offers a more affordable alternative to ASML’s solutions.
  • Compact Size: Designed to meet the space constraints of modern manufacturing setups.

The process begins by vaporizing tin into a cloud between two electrodes using a laser. High-voltage energy is then applied to create plasma, emitting EUV light with a wavelength of 13.5 nanometers—an industry-standard requirement for photolithography.

New Breakthrough Vs ASML ( An Anlogy)

Imagine you’re trying to light up a room using two different methods, each representing a different technology for generating EUV light.

ASML’s Laser-Produced Plasma (LPP) Method

This method is like using a powerful flashlight to shine on a mirror ball coated with tiny droplets of water. The flashlight (a high-energy laser) hits the droplets (liquid tin), turning them into a glowing mist (plasma). This glowing mist scatters light (EUV) all over the room. However, the flashlight needs to be incredibly powerful, and the process involves a lot of intricate machinery, like advanced circuits (FPGA chips), to ensure everything happens precisely. This makes it highly effective but also very complex and expensive.

Zhao’s Laser-Induced Discharge Plasma (LDP) Method

Now imagine instead of a flashlight, you use a simple spark between two wires to create light. First, a small vapor cloud (tin) is released between the wires.

Then, a spark (high voltage) is applied, turning the vapor into a glowing cloud (plasma) that lights up the room (produces EUV light).

This method directly converts electricity into light, making it simpler and more energy-efficient.

However, it’s like trying to adjust the timing of the spark and the amount of vapor perfectly—it’s tricky to get just right. Additionally, some worry that this spark-based method might not be bright enough to light up a very large room (power output limitations).

Comparison

  • LPP (Flashlight on droplets): Complex, powerful, and precise but expensive and energy-intensive.
  • LDP (Spark in a vapor cloud): Simpler, cheaper, and more energy-efficient but technically challenging to optimize and potentially limited in brightness.

Since 2008, Zhao’s team has been refining the “spark method,” and their recent award suggests they’ve made notable advancements. However, challenges like fine-tuning the spark timing and ensuring sufficient brightness remain critical hurdles.

Strategic Implications for China

This achievement positions China to address its urgent need for advanced chips, bypassing US-led restrictions. By developing its indigenous EUV lithography solutions, China’s aims to reduce its dependence on foreign technology.

Challenges Ahead

While promising, the LDP method faces critical challenges:

  1. Optimizing Parameters: Achieving precise control over discharge pulses and energy efficiency is complex.
  2. Power Output Limitations: Scaling up to meet industrial requirements remains a work in progress.
  3. Component Precision: Manufacturing high-precision components like mirrors is essential for full-scale deployment.

Collaborative Efforts Across China

China’s EUV research is not limited to Harbin. Several other institutions are contributing:

  1. Shanghai Institute of Optics and Fine Mechanics: Researchers are refining the LPP method to enhance energy conversion.
  2. Guangdong Bay Area Aerospace Information Research Institute: Focused on improving the power output and efficiency of LDP systems.
  3. Tsinghua University: Leading the SSMB-EUV project to establish a large-scale light source for future photolithography machines.

In January 2024, Harbin’s team collaborated with Shanghai researchers to improve EUV light control and focusing techniques.

Evolving Global Semiconductor Landscape

The US has continued tightening export controls on semiconductor equipment. In 2024, new restrictions were introduced on EUV masks and etching machines, critical for chip production. This has further galvanized China’s efforts to develop a self-reliant semiconductor ecosystem.

The Chinese government has ramped up investments in research and development, recognizing the strategic importance of mastering lithography technology.

Future Prospects

China’s EUV breakthroughs signal a long-term commitment to becoming a global leader in semiconductor manufacturing.

The ability to independently produce advanced lithography machines will enhance its competitiveness in the international market.

However, refining these technologies and achieving mass production will require sustained effort and significant investment.

Conclusion

The Harbin Institute’s innovative discharge plasma EUV technology marks a significant milestone in China’s quest for semiconductor independence.

By pioneering cost-effective and energy-efficient solutions, Chinese researchers are addressing one of the industry’s most complex challenges.

As the global tech landscape evolves, these advancements could reshape the balance of power in the semiconductor industry, making China a formidable player in the race for technological supremacy.

Source

Kumar Priyadarshi
Kumar Priyadarshi

Kumar Joined IISER Pune after qualifying IIT-JEE in 2012. In his 5th year, he travelled to Singapore for his master’s thesis which yielded a Research Paper in ACS Nano. Kumar Joined Global Foundries as a process Engineer in Singapore working at 40 nm Process node. Working as a scientist at IIT Bombay as Senior Scientist, Kumar Led the team which built India’s 1st Memory Chip with Semiconductor Lab (SCL).

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