How Lam is Revolutionizing Cryogenic Etching for Advanced 3D NAND Manufacturing

Lam Cryo™ 3.0 marks a significant advancement in cryogenic etching technology, offering unparalleled precision and performance for 3D NAND production.

Introduction

Lam Research has unveiled its latest innovation, Lam Cryo™ 3.0, a groundbreaking advancement in cryogenic etching technology.

Building on two decades of expertise in memory etch technology and five years of proven cryogenic etch solutions, Lam Cryo™ 3.0 promises to redefine the capabilities of 3D NAND production.

This new tool is set to play a crucial role in meeting the increasing demands of the AI era by enabling more advanced and efficient memory manufacturing.

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The Evolution of Cryogenic Etching

Video Credits: Lam Research

3D NAND:

3D NAND is a type of non-volatile flash memory that revolutionized the storage industry. Unlike its predecessor, 2D NAND which arranged memory cells horizontally, 3D NAND stacks these cells vertically, much like a skyscraper.  

How does it work?

By stacking memory cells in multiple layers, 3D NAND significantly increases storage density compared to traditional 2D NAND. This means you can fit more data into a smaller space.  

Benefits of 3D NAND

  • Higher storage capacity: More data can be stored in a smaller physical space.  
  • Improved performance: Faster read and write speeds compared to earlier NAND technologies.  
  • Better reliability: Reduced risk of data loss due to improved cell structure.  
  • Lower power consumption: More efficient use of energy.  

Applications of 3D NAND

  • Solid-state drives (SSDs): Offering faster boot times, quicker file transfers, and better overall system responsiveness.
  • USB flash drives: Providing higher capacities and faster data transfer speeds.
  • Memory cards: Enabling larger storage for photos, videos, and other media.

In essence, 3D NAND is the technology that powers the fast and efficient storage solutions we rely on today.

A Legacy of Innovation

Since 2019, Lam Research has been at the forefront of cryogenic etch technology, with nearly 1,000 cryo chambers installed worldwide.

It continues this legacy, pushing the boundaries of what’s possible in 3D NAND production.

The company’s cryogenic etch technology has already been used to produce over five million wafers, demonstrating its reliability and effectiveness in high-volume manufacturing.

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What is Cryogenic Etching ?

Cryogenic Etching

Cryogenic etching is a specialized process in semiconductor manufacturing that involves etching materials at extremely low temperatures. This technique is primarily used to create high aspect ratio structures, which are features that are long, narrow, and deep.  

How it works:

  • Low temperature: The process is conducted at temperatures well below freezing, often around -100°C or lower.  
  • Enhanced etching: The cold temperature allows for the use of specific chemistries that are not effective at room temperature. This results in improved etch rates, better control over the etching process, and the ability to create highly precise structures.  
  • High aspect ratio: Cryogenic etching is particularly effective in creating features with very high aspect ratios, which are essential for advanced semiconductor devices like 3D NAND memory.

Advantages of Cryogenic Etching:

  • Improved etch rates: Faster removal of material compared to traditional methods.  
  • Enhanced profile control: Greater precision in creating the desired shape of the etched feature.
  • Reduced damage: Less damage to the underlying material during the etching process.  
  • Enables new materials: Allows for the use of materials that are difficult to etch at higher temperatures.  

Challenges:

  • Complex equipment: Requires specialized equipment to maintain extremely low temperatures.
  • Process control: Precise control of temperature and other parameters is critical.
  • Cost: The process can be more expensive than traditional etching methods due to the specialized equipment and materials.

In summary, cryogenic etching is a cutting-edge technique that plays a crucial role in the production of advanced semiconductor devices. By enabling the creation of highly precise and complex structures, it contributes to the continuous miniaturization and performance improvements in the semiconductor industry.

Technology Overview

Lam Cryo™ 3.0 integrates several cutting-edge technologies:

High-Power Pulsed Plasma Reactor: This technology allows for precise control over the etching process.

Cryogenic Processing: The tool operates at temperatures significantly below 0°C, providing exceptional control over etch profiles.

Advanced Etch Chemistries: These are designed to enhance the precision and efficiency of the etching process.

This combination of technologies enables Lam Cryo™ 3.0 to achieve angstrom-level control of etch profiles and depths, essential for advancing 3D NAND technology.

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Why Lam Cryo™ 3.0 Matters

Precision and Scalability

Lam Cryo™ 3.0’s capabilities are crucial for the next generation of 3D NAND devices. The technology allows for:

  • Angstrom-Level Precision: Manufacturers can etch memory channels up to 10 microns deep with less than 0.1% deviation in channel dimensions.
  • Vertical Scaling: The tool supports high aspect ratio (HAR) etches, necessary for scaling memory devices to 400 layers and beyond.

This precision and scalability are vital for meeting the growing demands for flash memory, driven by AI applications both in the cloud and at the edge.

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Performance Enhancements

  • Speed: Lam Cryo™ 3.0 achieves etch rates 2.5 times faster than conventional plasma etching technologies and twice as fast as previous-generation cryogenic etch solutions.
  • Bit Scaling: The tool enables cost-effective bit scaling of memory devices, enhancing yield and performance.

These performance improvements are essential for chipmakers racing to achieve 1,000-layer 3D NAND by the end of the decade.

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Environmental Impact

Sustainability Benefits

Lam Cryo™ 3.0 also addresses environmental concerns associated with semiconductor manufacturing:

  • Reduced Energy Consumption: The tool is expected to cut energy usage per wafer by 40%.
  • Lower Emissions: There is a projected 90% reduction in emissions on cryo-enabled tools, thanks to the use of process gases with low global warming potential.

These environmental benefits align with the semiconductor industry’s increasing focus on sustainability and responsible manufacturing practices.

Industry Impact and Future Prospects

Industry Leadership

Lam Research’s advancements with Cryo™ 3.0 reinforce its position as a leader in wafer fabrication technology.

The company’s historical contributions to the transition from planar to 3D NAND and its pioneering work in cryogenic etching underscore its commitment to innovation and excellence.

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The Road Ahead

As the semiconductor industry continues to evolve, it will be instrumental in addressing the demands of the AI era.

The technology’s ability to support high-density 3D NAND production and its enhanced performance capabilities make it a crucial asset for chipmakers.

Industry Endorsements

Industry experts recognize the significance of Lam Cryo™ 3.0:

  • Sesha Varadarajan, SVP of the Global Products Group at Lam Research, highlights the tool’s role in advancing cryogenic etching technology and its impact on the semiconductor industry.
  • Neil Shah, co-founder and VP of research at Counterpoint Research, praises the tool for its precision and control, noting its potential to significantly enhance 3D NAND yields and performance.

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Conclusion

Lam Cryo™ 3.0 represents a major leap forward in cryogenic etching technology, offering unparalleled precision, speed, and environmental benefits. As the semiconductor industry pushes toward the goal of 1,000-layer 3D NAND, Lam Cryo™ 3.0 is poised to be a game-changer, enabling manufacturers to meet the demands of the AI era while advancing their sustainability efforts. With its proven track record and cutting-edge capabilities, Lam Cryo™ 3.0 solidifies Lam Research’s leadership in the wafer fabrication space and sets a new standard for future innovations.

Kumar Priyadarshi
Kumar Priyadarshi

Kumar Joined IISER Pune after qualifying IIT-JEE in 2012. In his 5th year, he travelled to Singapore for his master’s thesis which yielded a Research Paper in ACS Nano. Kumar Joined Global Foundries as a process Engineer in Singapore working at 40 nm Process node. Working as a scientist at IIT Bombay as Senior Scientist, Kumar Led the team which built India’s 1st Memory Chip with Semiconductor Lab (SCL).

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