Introduction
At the International Electron Devices Meeting (IEDM) 2024, Intel showcased a groundbreaking advancement in transistor technology with its Silicon RibbonFET CMOS architecture. This innovation achieves gate lengths as small as 6nm, setting the stage for the next phase of Moore’s Law. The breakthrough highlights Intel’s commitment to driving semiconductor progress and positions the company at the forefront of transistor scaling.
This development, presented by Dr. Ashish Agrawal, senior device engineer at Intel, signals a major leap in semiconductor design, focusing on nanosheet technology to deliver high performance and efficiency. Here’s an in-depth look at how Intel is redefining the limits of transistor architecture.
Overview: Key Highlights of Intel’s RibbonFET Technology
- RibbonFET Architecture: Intel’s latest CMOS architecture, utilizing nanosheet technology, supports gate lengths as small as 6nm.
- Precision Engineering: Innovations in doping profiles and source/drain junctions enhance performance and address challenges in short-channel effects.
- Scalability: The technology enables further transistor scaling, a cornerstone of Moore’s Law, and improves device efficiency at ultra-small dimensions.
- Novel Techniques: A unique single nanoribbon (1NR) process ensures precise measurements and optimized design for extreme scaling.
- Performance Gains: Enhanced metrics such as transconductance and reduced drain-induced barrier lowering (DIBL) demonstrate significant improvements over previous technologies.
Dr. Ashish Agrawal: The Face Behind the Innovation
Dr. Ashish Agrawal, a senior device engineer at Intel, delivered the RibbonFET presentation at IEDM 2024. With over a decade of experience in semiconductor R&D, Dr. Agrawal’s expertise spans front-end materials, electrical characterization, and design-technology co-optimization (DTCO).
His work focuses on analyzing novel materials and architectures for advanced technology nodes, making him a key contributor to Intel’s latest breakthroughs.
Breaking Down the RibbonFET Technology
1. Innovations in Architecture
RibbonFET represents Intel’s implementation of gate-all-around (GAA) transistor technology. This architecture uses nanosheets—thin ribbons of silicon—to replace traditional FinFET designs, offering greater control over electrical current and improved performance.
To achieve precise results, Intel developed a novel single nanoribbon (1NR) process, isolating the source and drain from the subfin. This approach eliminates interference, ensuring accurate measurements of nanoribbon characteristics.
2. Advanced Gate Lithography
Scaling gate lengths below 10nm required innovative lithography and etching processes. Intel employed advanced techniques such as dummy polysilicon etch and optimized gate lithography to achieve the 6nm gate length milestone.
3. Optimized Source/Drain Junctions
At ultra-small scales, source/drain junctions play a critical role in maintaining performance. Intel focused on doping profiles in the tip region to minimize ionized impurity scattering and enhance mobility. These optimizations mitigate short-channel effects and improve device reliability.
4. Overcoming Design Challenges
Creating effective gate lengths below 10nm presents unique challenges. For instance, fitting high-k dielectrics and achieving target threshold voltages (Vt) become increasingly difficult. Intel addressed these hurdles by engineering work functions to achieve a low Vt close to the desired target.
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Performance Metrics
Intel’s RibbonFET technology demonstrates substantial performance gains:
- Transconductance Improvement: A 34% increase in Gm_lin was observed for gate lengths of 18nm compared to longer gates, highlighting superior performance with optimized processes.
- Reduced DIBL: Optimized junction profiles reduced drain-induced barrier lowering, improving short-channel effects and overall device efficiency.
- Low External Resistance: The design achieved minimal external resistance, ensuring optimal current flow without performance penalties.
Implications for Moore’s Law
As transistor scaling approaches physical limits, maintaining Moore’s Law requires significant innovation. RibbonFET technology represents a pivotal step, enabling further miniaturization while delivering improved efficiency. By achieving gate lengths of 6nm and nanoribbon thicknesses of 1.5nm, Intel has demonstrated that scaling beyond traditional boundaries is possible.
These advancements not only sustain Moore’s Law but also pave the way for future innovations in semiconductor design. Applications spanning artificial intelligence, 5G, and edge computing stand to benefit from the enhanced performance and efficiency of RibbonFET transistors.
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Conclusion
Intel’s Silicon RibbonFET CMOS technology marks a historic milestone in transistor architecture, showcasing the company’s leadership in semiconductor innovation. With groundbreaking advancements in nanosheet technology, gate lithography, and doping profiles, Intel has pushed the boundaries of transistor scaling to new heights.
Dr. Agrawal’s presentation at IEDM 2024 underscores the vital role of process innovation in sustaining Moore’s Law. As the semiconductor industry continues to evolve, Intel’s RibbonFET technology serves as a beacon of progress, ensuring that smaller, faster, and more efficient chips remain at the heart of technological advancements.
