Micron Taiwan DRAM

Micron Opens new facility to Produce Most Advanced DRAM by 2025 in Taiwan

The plan is to mass-produce DRAM chips using the 1-gamma node in Taichung by 2025. It will be the first to incorporate extreme ultraviolet (EUV) technology in Micron's DRAM manufacturing process.
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In a significant stride toward meeting the growing demand for artificial intelligence (AI) applications, U.S.-based dynamic random access memory (DRAM) chip supplier Micron Technology Inc. inaugurated a state-of-the-art assembly and test facility in Taichung, Taiwan.

The new facility underscores Micron’s commitment to technology leadership and operational excellence while strengthening its global presence.

This blog post explores the significance of Micron’s investment in Taichung, the role of the facility in advancing DRAM technology, and its contribution to the global AI ecosystem.

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Micron Expansion in Taiwan:

Micron Technology, a global leader in memory and storage solutions, unveiled its advanced assembly and test facility in Taichung, Taiwan.

The company’s President and CEO, Sanjay Mehrotra, emphasized that the facility’s opening represents Micron’s dedication to its global customer base.

“The opening of our new advanced assembly and test facility is a reflection of Micron’s technology leadership, operational excellence and deep, long-term commitment to meeting the needs of our global customer base,”

~Micron Technology President and CEO Sanjay Mehrotra said in a statement.

As one of the largest foreign investors in Taiwan, Micron had already employed around 10,000 people in Taiwan by the end of 2022, highlighting the company’s strong commitment to the region.

Read More: China Massive DRAM Project Secures 5.3B$; Mass Production by 2026

What is HBM3E Technology:

HBM3E Technology, or High Bandwidth Memory 3E, is the fifth generation of High Bandwidth Memory (HBM) technology. It is a high-performance memory technology that stacks multiple DRAM chips vertically and interconnects them with a high-speed interface. This results in significantly higher memory bandwidth than traditional DRAM memory modules.

HBM3E technology was first announced in 2021 and is expected to enter mass production in 2023. It is expected to be used in a variety of applications, including high-performance computing (HPC), artificial intelligence (AI), and machine learning (ML).

Some of the key features of HBM3E technology include:

  • Up to 1.2TB/s of memory bandwidth
  • 9.2Gbps pin speed
  • 1024 IO pins
  • Backward compatible with HBM2 devices
  • Improved power efficiency

HBM3E technology is a significant improvement over previous generations of HBM technology. It offers higher memory bandwidth, faster pin speeds, and improved power efficiency. This makes it ideal for a wide range of demanding applications, such as HPC, AI, and ML.

Here are some examples of where HBM3E technology is expected to be used:

  • AI accelerators
  • Machine learning processors
  • High-performance computing systems
  • Graphics processing units (GPUs)
  • Networking and telecommunications equipment

HBM3E technology is a key enabler for next-generation computing applications. It provides the memory bandwidth and performance that is needed to power these applications.

Read More: Micron Unveils NVDRAM: Revolutionary DRAM-Like Non-Volatile Memory for AI

The Significance of the Micron New Facility in Taiwan:

The Taichung facility is part of Micron’s strategy to enhance its global assembly and test network, which already spans Taiwan, China, Singapore, and Malaysia.

This expansion will play a crucial role in expediting Micron’s development of advanced DRAM processes.

Furthermore, it will support the ramp-up of 1-beta and HBM3E manufacturing in both Japan and Taiwan, and anticipate the production of 1-gamma technology by 2025.

Image Credits: Micron

1-Gamma Node and EUV Technology:

One of the most notable aspects of this investment is the plan to mass-produce DRAM chips using the 1-gamma node in Taichung by 2025.

The 1-gamma node is a technological milestone jointly developed by Micron’s research and development teams in Taiwan and Japan.

What makes this node particularly special is that it will be the first to incorporate extreme ultraviolet (EUV) technology in Micron’s DRAM manufacturing process.

EUV technology enables more precise and efficient chip production, further cementing Micron’s position at the forefront of semiconductor manufacturing.

Contributions to the Taiwan from Micron:

Micron’s commitment to Taiwan goes beyond its technological investments. The company’s dedication to maintaining sustainable operations and advancing workforce development in the region is vital for the local community.

Micron Taiwan’s head, Lu Donghui, highlighted the company’s role in contributing to the broader ecosystem, ensuring a mutually beneficial relationship between the company and its surroundings.

“We are committed to continuing to deploy leading-edge technology while maintaining sustainable operations, advancing workforce development, and contributing to the community which benefits the entire ecosystem,”

~Lu Donghui, head of Micron Taiwan 

Read More: Why can’t we Scale memory chips?:


Micron Technology’s new facility in Taichung is a significant milestone for the semiconductor industry and AI applications. By investing in cutting-edge technologies, expanding its global footprint, and contributing to the local community, Micron is not only advancing its own interests but also playing a crucial role in driving innovation and progress in the AI and memory technology sectors. As the demand for AI continues to grow, Micron’s dedication to staying at the forefront of technology ensures a bright future for both the company and the industries it serves.

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