Samsung to Launch 400-Layer Bonding Vertical NAND Flash for AI Servers by 2026

Samsung Electronics is set to unveil its 400-layer bonding vertical NAND flash chip by 2026,

Introduction

Samsung Electronics Co., the world’s leading memory chip manufacturer, is set to revolutionize the NAND flash market with its plans to introduce a groundbreaking 400-layer vertical NAND flash chip by 2026.

This ambitious move aims to meet the growing demands of data-intensive applications, especially within the realm of artificial intelligence (AI). As the market for AI and related technologies expands, Samsung’s innovative approach positions the company to solidify its leadership in the semiconductor industry.

Key Highlights

  • Introduction of 400-Layer NAND: Samsung plans to unveil a 400-layer vertical NAND flash chip, enhancing storage capacity and performance.
  • Advanced Bonding Technology: The innovative bonding method will separate cell and peripheral production, improving heat dissipation.
  • Future Developments: The company aims to release over 1,000-layer NAND chips by 2030, further increasing storage density.
  • DRAM Advancements: Samsung is also focusing on advancing its DRAM technologies to support AI applications.
  • Market Growth Projections: The global memory market is expected to grow significantly, presenting substantial opportunities for Samsung.

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A Game-Changing Technology

Samsung’s Device Solutions (DS) division is advancing vertical NAND technology to maximize storage by stacking memory cells vertically, as reported by The Korea Economic Daily.

Traditional NAND chips face issues stacking beyond 300 layers without harming the peripheral circuitry. Samsung’s upcoming 10th-generation V NAND (V10) will solve this with a bonding technique. It produces cells and peripheral parts separately, then joins them, improving heat dissipation and performance.

This is essential for high-capacity solid-state drives (SSDs) in AI data centers. Samsung calls this new chip bonding vertical NAND flash (BV NAND), designed specifically for AI storage needs.

Pioneering the Vertical NAND Market

Samsung has led the NAND flash market in innovations. In 2013, it introduced vertically stacked cells, pushing memory tech forward.

Now, BV NAND is set to increase bit density by 1.6 times, boosting storage without added bulk. Samsung’s 286-layer V9 NAND flash chips are already in mass production, showing its dedication to high-performance memory.

With data storage demand rising in AI and machine learning, Samsung’s push for higher-layer NAND solutions is timely and critical.

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Future Roadmap: Beyond 400 Layers

Samsung’s ambitious plans extend beyond the immediate rollout of 400-layer NAND. Samsung aims to produce over 1,000-layer NAND chips by 2030.

This goal positions it as a leader in high-capacity, high-performance NAND technology. The push for higher layers is critical as competition in NAND intensifies.

The rise of AI chips drives demand for large storage capacities to handle image and video processing.

Samsung also plans to launch V11 NAND in 2027. This generation will boost data input and output speeds by 50%. It’s a strategic step to maintain leadership in memory technology. The need for faster, more efficient memory is growing rapidly, and Samsung aims to meet it head-on.

The Broader Memory Landscape

As Samsung continues to lead in NAND technology, it is also focusing on enhancing its DRAM offerings. The company plans to introduce the sixth-generation 10-nanometer DRAM (1c DRAM) and the seventh generation (1d DRAM) by late 2024.

These advancements will cater to the needs of high-performance AI chips, including the anticipated HBM4.

Samsung’s commitment to innovation does not stop there. By 2027, the company plans to unveil sub-10 nm DRAM (0a DRAM), which will utilize a vertical channel transistor (VCT) 3D structure.

This technology is expected to improve performance and stability significantly by reducing interference between cells.

Leadership and Market Outlook

Vice Chairman Jun Young-hyun, who heads Samsung’s DS division, has emphasized the need for a corporate overhaul following disappointing preliminary third-quarter earnings.

While Samsung holds a dominant position in the DRAM market, it faces stiff competition from SK Hynix, particularly in the high-bandwidth memory (HBM) sector.

Samsung’s ability to innovate in NAND and DRAM technologies will be critical in maintaining its market leadership.

The global memory market is poised for rapid growth, projected to expand from an estimated $92 billion in 2024 to $227 billion by 2026, according to market research firm Gartner. With expectations of significant annual growth in server DRAM (27%) and enterprise SSD (eSSD) (35%) markets from 2024 to 2029, Samsung’s initiatives in NAND and DRAM are strategically aligned with market trends.

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Conclusion

Samsung Electronics is poised to make a significant impact on the memory chip market with its upcoming 400-layer bonding vertical NAND flash chip set for release by 2026.

As the company continues to innovate and enhance its storage solutions, it reinforces its position as a leader in the semiconductor industry, catering to the growing demands of AI and data-intensive applications. With ambitious goals for the future and a clear roadmap for advancements in both NAND and DRAM technologies, Samsung is well-prepared to navigate the evolving landscape of the memory market.

By addressing the needs of AI data centers and leveraging cutting-edge technologies, Samsung aims to set the standard for high-capacity, high-performance storage solutions in the years to come.

Kumar Priyadarshi
Kumar Priyadarshi

Kumar Priyadarshi is a prominent figure in the world of technology and semiconductors. With a deep passion for innovation and a keen understanding of the intricacies of the semiconductor industry, Kumar has established himself as a thought leader and expert in the field. He is the founder of Techovedas, India’s first semiconductor and AI tech media company, where he shares insights, analysis, and trends related to the semiconductor and AI industries.

Kumar Joined IISER Pune after qualifying IIT-JEE in 2012. In his 5th year, he travelled to Singapore for his master’s thesis which yielded a Research Paper in ACS Nano. Kumar Joined Global Foundries as a process Engineer in Singapore working at 40 nm Process node. He couldn’t find joy working in the fab and moved to India. Working as a scientist at IIT Bombay as Senior Scientist, Kumar Led the team which built India’s 1st Memory Chip with Semiconductor Lab (SCL)

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