Tsinghua Breakthrough Fuels China’s Push for Domestic EUV Photoresist Production in 2025

This innovation could reshape China’s chipmaking landscape by reducing its reliance on Japanese materials and fueling next-gen chip production.

Introduction

China just got one step closer to breaking free from its dependency on Japanese semiconductor materials. Researchers at Tsinghua University have developed a new type of Domestic EUV Photoresist based on polytellurium oxane—a material that could play a critical role in next-generation chipmaking.

The breakthrough isn’t just a technical win—it’s a strategic play in China’s broader goal of semiconductor self-reliance. With U.S. export controls tightening and Japanese firms dominating the photoresist market, China is racing to localize production of the highly specialized materials needed for chips at 7nm and below.

This could mark a turning point in the global chip supply chain, and a serious wake-up call for the EUV photoresist market currently controlled by Japan’s JSR and Korea’s Dongjin Semichem.

Quick 5-Point Overview

Breakthrough Material: Tsinghua developed a new Te-based EUV photoresist to enhance lithography performance.

Strategic Importance: The innovation supports China’s 2025 semiconductor self-reliance plan.

Performance Boost: Tellurium offers superior EUV absorption and better pattern resolution.

Global Impact: This could disrupt the Japan-Korea duopoly in EUV photoresist materials.

Backed by Policy: Supported by over ¥50 billion in national funding under China’s IC Investment Fund Phase III.

The Background: Why EUV Photoresist Matters

EUV photoresists are critical materials in semiconductor manufacturing. They enable EUV lithography, which uses light with a wavelength of 13.5nm to carve ultra-fine patterns onto silicon wafers.

This technique is essential for producing chips at 7nm and below, which power AI processors, smartphones, and GPUs. But the photoresist must meet tough technical requirements—like high sensitivity, uniformity, and minimal line edge roughness. The EUV source itself is dim, so the photoresist has to do more of the heavy lifting.

Right now, China imports nearly 100% of its EUV photoresist, mostly from Japan and Korea. According to JRJ.com, domestic production of older photoresist types like KrF/ArF remains below 5%. For EUV photoresist, the gap is even wider.

That’s a huge risk in today’s techno-geopolitical climate.

techovedas.com/upturns-and-downturns-5-reasons-the-semiconductor-industry-market-is-so-volatile

Inside the Breakthrough: Tellurium for the Win

Tsinghua’s research—published in Science Advances on July 16, 2025—introduces a polytellurium oxane-based polymer that shows promise as a next-gen EUV photoresist.

Here’s what makes it different:

  • It uses Tellurium (Te), a heavy element that absorbs EUV light more effectively than traditional metals like Zinc, Tin, or Hafnium.
  • The Te–O (tellurium-oxygen) bond in the polymer backbone breaks easily when hit by EUV light. That makes the photoresist more sensitive and accurate.
  • The polymer structure improves energy transfer and pattern definition—two critical issues in EUV lithography.

This isn’t just a lab experiment. The material meets all four performance pillars laid out by Tsinghua:

EUV Photoresist TraitImportanceTsinghua’s Te-Based Solution
High EUV AbsorptionBoosts photon efficiency✅ Tellurium absorbs better
Energy UtilizationReduces power requirement✅ Te–O bonds break efficiently
Molecular UniformityImproves pattern fidelity✅ Engineered polymer backbone
Pattern SensitivityEnables lower EUV dose usage✅ High reactivity upon exposure

If scalable, this could redefine the EUV photoresist market.

techovedas.com/chinas-7nm-chips-a-threat-to-us-supremacy

Why China Wants to Cut the Cord from Japan

Japan’s JSR Corporation is the dominant supplier of EUV photoresists, followed by South Korea’s Dongjin Semichem. These companies are deeply integrated with ASML, the sole supplier of EUV lithography machines used by chip giants like TSMC, Samsung, and Intel.

But with U.S. export bans and Japan aligning with Western tech policy, China faces growing restrictions on access to these materials.

That’s where the government comes in.

National Semiconductor Strategy

China’s “National Integrated Circuit Industry Investment Fund Phase III Plan”—unveiled in 2024—set aside over ¥50 billion (~$7 billion) for domestic R&D in areas like:

  • EUV photoresists
  • Substrate materials
  • Etching gases
  • CMP slurries
  • Advanced packaging tools

This aligns with the “Made in China 2025” initiative, which lists semiconductor self-reliance as a top priority. Tsinghua’s breakthrough fits directly into this framework.

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Not Just Science—But Strategy

This isn’t just about chemistry. It’s about control.

With AI workloads exploding, demand for advanced chips is growing fast. China is the largest consumer of semiconductors, but lacks homegrown access to the most advanced nodes. That gap weakens its position in everything from AI training models to military defense systems.

By developing its own EUV photoresists, China could:

  • Reduce import reliance from Japan and Korea
  • Avoid U.S. export bans on photoresist materials
  • Control the entire chipmaking pipeline, from wafers to packaging
  • Fuel domestic fabs being built by SMIC, Huawei, and YMTC

If production scales, this development could supply China’s first EUV-capable fabs, especially as domestic lithography tools by companies like SMEE and SiCarrier slowly mature.

/techovedas.com/euv-dreams-or-delusion-chinas-battle-to-master-chip-lithography

Industry Voices and Expert Takes

According to Mydrivers.com, researchers are optimistic but cautious. “This new formulation meets critical technical metrics in lab testing. The challenge now lies in reproducibility and industrial scaling,” said an unnamed Tsinghua researcher.

Dr. Xiang He, a semiconductor analyst based in Shenzhen, added:

This is a technical milestone, but we need industrial partners to turn it into commercial volume. Otherwise, it remains a lab success.”

Meanwhile, SMIC—China’s top chip foundry—continues investing in 7nm process nodes using DUV multi-patterning.

A viable EUV photoresist could help SMIC make the jump to EUV production, if ASML tools become accessible or if domestic lithography alternatives emerge.

/techovedas.com/why-smic-revenue-from-us-companies-increased-despite-ban

Conclusion: A Turning Point?

Tsinghua University’s polytellurium oxane-based Domestic EUV Photoresist may not dominate the market tomorrow—but it signals a shift. For the first time, China is making serious progress in a field that was considered off-limits just a few years ago.

With national funding, a policy push, and institutional research momentum, China could soon have homegrown EUV materials to feed its expanding semiconductor ecosystem.

Stay ahead with techovedas.com of the curve, don’t miss out on these groundbreaking announcements that could transform the tech landscape.

Kumar Priyadarshi
Kumar Priyadarshi

Kumar Joined IISER Pune after qualifying IIT-JEE in 2012. In his 5th year, he travelled to Singapore for his master’s thesis which yielded a Research Paper in ACS Nano. Kumar Joined Global Foundries as a process Engineer in Singapore working at 40 nm Process node. Working as a scientist at IIT Bombay as Senior Scientist, Kumar Led the team which built India’s 1st Memory Chip with Semiconductor Lab (SCL).

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