Nvidia Gives Thumbs Up to Samsung HBM3E 12H DRAM: 50% More Capacity & Bandwidth

50% more capacity with 50% more bandwidth and compatible with existing HBM packaging.

Introduction

In a monumental leap forward for the semiconductor industry, Samsung Electronics has unveiled its latest innovation: the 36GB HBM3E 12H DRAM.

This cutting-edge high-bandwidth memory (HBM) technology represents a significant advancement in the realm of data storage and processing capabilities.

Notably, Samsung Electronics has achieved the remarkable feat of becoming the first manufacturer to develop and introduce this groundbreaking technology to the market.

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Nvidia CEO Approves Samsung’s HBM3E 12H DRAM

The unveiling of the Samsung 36GB HBM3E 12H DRAM garnered widespread attention, particularly when Nvidia CEO Jensen Huang visited the Samsung Electronics booth at the GTC 2024 event held at the San Jose Convention Center in California, US. During his visit, Huang personally inspected the showcased HBM3E DRAM and left his mark of approval by signing “Jensen Approved” beside the product.

This momentous occasion was captured and shared by Han Jin-man, Samsung Electronics’ executive vice president of the U.S. DS division.

  • Public Sign of Confidence: During the GTC 2024 event, Jensen Huang, CEO of Nvidia, visited the Samsung booth and signed his approval on the HBM3E 12H DRAM display. This signifies Nvidia’s strong interest in the technology’s potential.
  • Testing and Collaboration: Nvidia has confirmed they are currently testing Samsung’s HBM3E memory for possible integration into their GPUs. This collaboration between the two tech giants could lead to powerful new graphics cards.
  • Not Guaranteed Adoption: It’s important to note that CEO Huang’s signature doesn’t guarantee immediate adoption by Nvidia. Further testing and evaluation are likely before large-scale use in Nvidia products.

Overall, this is a positive development for the future of high-performance computing. With Samsung’s innovative memory and Nvidia’s powerful GPUs, we can expect even more advancements in AI, graphics, and other demanding applications.

While the endorsement from Nvidia’s CEO is undoubtedly significant, it’s essential to note that Huang clarified that the signature does not imply an immediate adoption of Samsung’s HBM3E by Nvidia.

At a global press conference held the day before, Huang mentioned that Nvidia is still in the process of qualifying the technology, indicating that they have not yet started using it.

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Technical Specifications and Advancements

The Samsung 36GB HBM3E 12H DRAM boasts unparalleled technical specifications, setting new standards in terms of both bandwidth and capacity.

  • Increased Capacity: It boasts the highest capacity of any HBM (High Bandwidth Memory) to date, at 36 gigabytes (GB). That’s over 50% more capacity compared to the previous generation.
  • Enhanced Bandwidth: This new DRAM offers an unprecedented bandwidth of 1,280 gigabytes per second (GB/s). Again, a more than 50% improvement.
  • Space Saving Design: Samsung’s innovation with Thermal Compression Non-conductive Film (TC NCF) allows these 12-layer stacks to maintain the same height as earlier 8-layer models, making them compatible with existing HBM packaging.

With an all-time high bandwidth of up to 1,280 gigabytes per second, this HBM3E DRAM delivers exceptional performance, making it ideal for a wide range of applications, including high-performance computing, artificial intelligence, and graphics-intensive tasks.

One of the most remarkable features of the Samsung HBM3E 12H DRAM is its industry-leading capacity of 36 gigabytes, which significantly enhances data storage capabilities.

Furthermore, Samsung has implemented advanced thermal compression non-conductive film technology, enabling the 12-layer products to maintain the same height specification as 8-layer ones.

This innovation ensures compatibility with current HBM package requirements while maximizing performance and efficiency.

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Implications and Future Prospects

The introduction of the Samsung 36GB HBM3E 12H DRAM marks a significant milestone in the evolution of high-bandwidth memory technology.

Its unrivaled performance capabilities and innovative design pave the way for enhanced data processing and storage solutions across various industries.

While Nvidia’s endorsement underscores the technology’s potential, further collaborations and integrations with leading industry players are expected to drive widespread adoption and propel the advancement of computing technologies to new heights.

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Conclusion

In conclusion, Samsung Electronics’ groundbreaking achievement in developing the HBM3E 12H DRAM represents a paradigm shift in high-bandwidth memory technology.

The Samsung 36GB HBM3E 12H DRAM is a game-changer in the semiconductor world. Its amazing performance and smart design will transform how we use computers. It’ll make data-focused apps and systems even better for the future.

Editorial Team
Editorial Team
Articles: 1955